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Active Area: 0.82mm^2 (1.02mm diameter)
Rise Time: <1ns
NEP: 5.0 x 10^(-14) W/Hz^(1/2) @ 900nm, 20V
Dark Current: 2.5nA @ 20V
Junction capacitance: 10pF @ 0V
320.00
Active Area: 0.82mm^2 (1.02mm diameter)
Rise Time: <1ns
NEP: 5.0 x 10^(-14) W/Hz^(1/2) @ 900nm, 20V
Dark Current: 2.5nA @ 20V
Junction capacitance: 10pF @ 0V
320.00 320.0 USD
Price Valid only in North America

Material: Si
Wavelength Range: 350-1100
Detector Size: 3.6 x 3.6mm
Gain (Fixed): 8 x 10 dB steps
Bandwidth Range: DC - 17MHz
NEP: 2.1x10^(-12) to 7.7x10^(-11) W/Hz^(1/2)
650.00
In Stock
Material: Si
Wavelength Range: 350-1100
Detector Size: 3.6 x 3.6mm
Gain (Fixed): 8 x 10 dB steps
Bandwidth Range: DC - 17MHz
NEP: 2.1x10^(-12) to 7.7x10^(-11) W/Hz^(1/2)
650.00 650.0 USD
Price Valid only in North America

Material: Si
Wavelength Range: 350-1100
Detector Size: 0.8mm diameter
Gain (Fixed): 100kV/A
Bandwidth Range: DC - 50MHz
NEP: 6.5x10^(-11) W/Hz^(1/2)
800.00
In Stock
Material: Si
Wavelength Range: 350-1100
Detector Size: 0.8mm diameter
Gain (Fixed): 100kV/A
Bandwidth Range: DC - 50MHz
NEP: 6.5x10^(-11) W/Hz^(1/2)
800.00 800.0 USD
Price Valid only in North America

Material: Si
Wavelength Range: 200-1100
Detector Size: 1.0mm diameter
Gain (Fixed): 10kV/A
Bandwidth Range: DC - 150MHz
NEP: 5.5x10^(-11) W/Hz^(1/2)
605.00
In Stock
Material: Si
Wavelength Range: 200-1100
Detector Size: 1.0mm diameter
Gain (Fixed): 10kV/A
Bandwidth Range: DC - 150MHz
NEP: 5.5x10^(-11) W/Hz^(1/2)
605.00 605.0 USD
Price Valid only in North America

Active Area: 13mm^2 (3.6 x 3.6mm)
Wavelength Range: 350-1100nm
Rise Time: 14ns
NEP: 1.6x10^(-14) W/Hz^(1/2)
Dark Current: 0.35nA
Junction Capacitance: 40pF
560.00
In Stock
Active Area: 13mm^2 (3.6 x 3.6mm)
Wavelength Range: 350-1100nm
Rise Time: 14ns
NEP: 1.6x10^(-14) W/Hz^(1/2)
Dark Current: 0.35nA
Junction Capacitance: 40pF
560.00 560.0 USD
Price Valid only in North America

Rise/Fall Time: 14 ns
Active Area: 13mm^2 (3.6 x 3.6mm)
NEP: 1.6E-14 W/Hz^(1/2)
Dark Current: 0.35 nA
Material: UV-enhanced Si
Junction Capacitance: 40pF @5V
360.00
In Stock
Rise/Fall Time: 14 ns
Active Area: 13mm^2 (3.6 x 3.6mm)
NEP: 1.6E-14 W/Hz^(1/2)
Dark Current: 0.35 nA
Material: UV-enhanced Si
Junction Capacitance: 40pF @5V
360.00 360.0 USD
Price Valid only in North America

Rise/Fall Time: 450ns/45ns
Responsivity: 0.50 A/W
Active Area: Diameter = 9mm
NEP: 5.5E-14 W/Hz^(1/2)@5V
Dark Current: 1.0uA@5V
Material: UV-enhanced Si
Junction Capacitance: 1.75nF @0V
620.00
Rise/Fall Time: 450ns/45ns
Responsivity: 0.50 A/W
Active Area: Diameter = 9mm
NEP: 5.5E-14 W/Hz^(1/2)@5V
Dark Current: 1.0uA@5V
Material: UV-enhanced Si
Junction Capacitance: 1.75nF @0V
620.00 620.0 USD
Price Valid only in North America

Rise/Fall Time: 10ns
Active Area: 13mm^2 (3.6x3.6mm)
NEP: 1.2x10^(-14) W/Hz^(1/2)
Dark Current: 0.3nA
Material: Si
Junction Capacitance: 65pF @5V
360.00
In Stock
Rise/Fall Time: 10ns
Active Area: 13mm^2 (3.6x3.6mm)
NEP: 1.2x10^(-14) W/Hz^(1/2)
Dark Current: 0.3nA
Material: Si
Junction Capacitance: 65pF @5V
360.00 360.0 USD
Price Valid only in North America

Rise/Fall Time: 45ns
Active Area: 100mm^2 (Diameter = 11.0mm)
NEP: 5.5x10^(-14) W/Hz^(1/2)
Dark Current: 1.0uA
Material: Si
Junction Capacitance: 1.75nF @0V
290.00
In Stock
Rise/Fall Time: 45ns
Active Area: 100mm^2 (Diameter = 11.0mm)
NEP: 5.5x10^(-14) W/Hz^(1/2)
Dark Current: 1.0uA
Material: Si
Junction Capacitance: 1.75nF @0V
290.00 290.0 USD
Price Valid only in North America

Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.9-2.55 microns
Typical Dark Current: 500 pA
25,875.00
In Stock
Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.9-2.55 microns
Typical Dark Current: 500 pA
25,875.00 25875.0 USD
Price Valid only in North America

Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.9-2.3 microns
Typical Dark Current: 200 pA
25,875.00
In Stock
Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.9-2.3 microns
Typical Dark Current: 200 pA
25,875.00 25875.0 USD
Price Valid only in North America

Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.9-2.1 microns
Typical Dark Current: 30 pA
25,875.00
In Stock
Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.9-2.1 microns
Typical Dark Current: 30 pA
25,875.00 25875.0 USD
Price Valid only in North America

Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.9-1.9 microns
Typical Dark Current: 15 pA
25,875.00
In Stock
Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.9-1.9 microns
Typical Dark Current: 15 pA
25,875.00 25875.0 USD
Price Valid only in North America

Active Area: 12.8mm x 0.5mm
Total No. Pixels: 512
Active Pixels: 512
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.8-1.7 microns
Typical Dark Current: 1 pA
20,675.00
In Stock
Active Area: 12.8mm x 0.5mm
Total No. Pixels: 512
Active Pixels: 512
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.8-1.7 microns
Typical Dark Current: 1 pA
20,675.00 20675.0 USD
Price Valid only in North America

Active Area: 12.8mm x 0.5mm
InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is
made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in
charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is
hermetically sealed for high reliability.

Signal processing circuits on the CMOS chip can be selected from two conversion efficiencies (CE) by external voltage.

Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 500microns
Spectral Response: 0.8-1.7 microns
Typical Dark Current: 4 pA
20,385.00
In Stock
Active Area: 12.8mm x 0.5mm
InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is
made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in
charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is
hermetically sealed for high reliability.

Signal processing circuits on the CMOS chip can be selected from two conversion efficiencies (CE) by external voltage.

Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 500microns
Spectral Response: 0.8-1.7 microns
Typical Dark Current: 4 pA
20,385.00 20385.0 USD
Price Valid only in North America

Active Area: 12.8mm x 0.25mm
Total No. Pixels: 512
Active Pixels: 512
Pixel Size (H x V): 25microns x 250microns
Spectral Response: 0.8-1.7 microns
Typical Dark Current: 1 pA
20,385.00
In Stock
Active Area: 12.8mm x 0.25mm
Total No. Pixels: 512
Active Pixels: 512
Pixel Size (H x V): 25microns x 250microns
Spectral Response: 0.8-1.7 microns
Typical Dark Current: 1 pA
20,385.00 20385.0 USD
Price Valid only in North America

Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.8-1.7 microns
Typical Dark Current: 2 pA
20,094.00
In Stock
Active Area: 12.8mm x 0.25mm
Total No. Pixels: 256
Active Pixels: 256
Pixel Size (H x V): 50microns x 250microns
Spectral Response: 0.8-1.7 microns
Typical Dark Current: 2 pA
20,094.00 20094.0 USD
Price Valid only in North America

Liquid Helium Cooled Bolometers are 10^2 to 10^4 (two to four orders magnitude) more sensitive than room temperature pyro-electric detectors
Liquid Helium Cooled 1.6K
5u - 2000u spectral range
Liquid Nitrogen required in outer jacket (dual stage cooling)
2.5 mm diameter diamond absorber
0.5" F/3.8 diameter condensing cone as input optics
Preamp circuitry generates +/-14V max
5" Diameter Dewar Included

Filterwheel Position #1 - Long pass 5micron cut-on
Position #2 - Wedged P13 filter (13micron cut-on long pass)
Position #3 - Wedged C103 filter (103 micron cut-on long pass filter)
Wedged Diamond window Diameter = 25.0mm


54,340.00
In Stock
Liquid Helium Cooled Bolometers are 10^2 to 10^4 (two to four orders magnitude) more sensitive than room temperature pyro-electric detectors
Liquid Helium Cooled 1.6K
5u - 2000u spectral range
Liquid Nitrogen required in outer jacket (dual stage cooling)
2.5 mm diameter diamond absorber
0.5" F/3.8 diameter condensing cone as input optics
Preamp circuitry generates +/-14V max
5" Diameter Dewar Included

Filterwheel Position #1 - Long pass 5micron cut-on
Position #2 - Wedged P13 filter (13micron cut-on long pass)
Position #3 - Wedged C103 filter (103 micron cut-on long pass filter)
Wedged Diamond window Diameter = 25.0mm


54,340.00 54340.0 USD
Price Valid only in North America

Liquid Helium Cooled Bolometers are 10^2 to 10^4 (two to four orders of magnitude) more sensitive than room temperature pyro-electric detectors
Liquid Helium Cooled to 4.2K
Liquid Nitrogen required in outer jacket (dual stage cooling)
Response for 20~100um, with some sensitivity up to 300um
0.5" diameter condensing cone as input optics
Preamp circuitry generates +/-14V max
5" Diameter Dewar Included

See below for more specifications.
34,340.00
In Stock
Liquid Helium Cooled Bolometers are 10^2 to 10^4 (two to four orders of magnitude) more sensitive than room temperature pyro-electric detectors
Liquid Helium Cooled to 4.2K
Liquid Nitrogen required in outer jacket (dual stage cooling)
Response for 20~100um, with some sensitivity up to 300um
0.5" diameter condensing cone as input optics
Preamp circuitry generates +/-14V max
5" Diameter Dewar Included

See below for more specifications.
34,340.00 34340.0 USD
Price Valid only in North America

4kW max average power, 100mm aperture, water-cooled. Doesn't require monitor, includes USB cable and PC-HP application software.

Sensitivity 0.4 mW/W,
rise time 7 sec,
spectral range 0.19-20um.
7,911.00
In Stock
4kW max average power, 100mm aperture, water-cooled. Doesn't require monitor, includes USB cable and PC-HP application software.

Sensitivity 0.4 mW/W,
rise time 7 sec,
spectral range 0.19-20um.
7,911.00 7911.0 USD
Price Valid only in North America
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