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The Sciencetech SSIVT-REF single element silicon detector is designed to be used for monitoring and verifying the Sun level of solar simulators. The SSIVT-REF detector is used effective in sensing wavelengths between 190 nm and 1100 nm and is calibrated at Sciencetech against a NIST traceable calibrated reference cell. The SSIVT-REF detector can be used with Sciencetech SSIVT measurement system or Sciencetech SOL-METER solar power meter. Comes with a detachable cable with 4 banana plugs for connecting to a measurement device such as a source meter or Sciencetech SOL-METER. CE compliant.

Rise time: 0.2 μs
Effective active area: 5.7 sq. mm
Dimensions: 50.8 × 50.8 × 25.4 mm
631.00
In Stock
The Sciencetech SSIVT-REF single element silicon detector is designed to be used for monitoring and verifying the Sun level of solar simulators. The SSIVT-REF detector is used effective in sensing wavelengths between 190 nm and 1100 nm and is calibrated at Sciencetech against a NIST traceable calibrated reference cell. The SSIVT-REF detector can be used with Sciencetech SSIVT measurement system or Sciencetech SOL-METER solar power meter. Comes with a detachable cable with 4 banana plugs for connecting to a measurement device such as a source meter or Sciencetech SOL-METER. CE compliant.

Rise time: 0.2 μs
Effective active area: 5.7 sq. mm
Dimensions: 50.8 × 50.8 × 25.4 mm
631.00 631.0 USD

Price Valid only in North America


Rise/Fall Time: 450ns/45ns
Responsivity: 0.50 A/W
Active Area: Diameter = 9mm
NEP: 5.5E-14 W/Hz^(1/2)@5V
Dark Current: 1.0uA@5V
Material: UV-enhanced Si
Junction Capacitance: 1.75nF @0V
Rise/Fall Time: 450ns/45ns
Responsivity: 0.50 A/W
Active Area: Diameter = 9mm
NEP: 5.5E-14 W/Hz^(1/2)@5V
Dark Current: 1.0uA@5V
Material: UV-enhanced Si
Junction Capacitance: 1.75nF @0V
626.00 626.0 USD

Price Valid only in North America


Active Area: 13mm^2 (3.6 x 3.6mm)
Wavelength Range: 350-1100nm
Rise Time: 14ns
NEP: 1.6x10^(-14) W/Hz^(1/2)
Dark Current: 0.35nA
Junction Capacitance: 40pF
In Stock
Active Area: 13mm^2 (3.6 x 3.6mm)
Wavelength Range: 350-1100nm
Rise Time: 14ns
NEP: 1.6x10^(-14) W/Hz^(1/2)
Dark Current: 0.35nA
Junction Capacitance: 40pF
566.00 566.0 USD

Price Valid only in North America


Rise/Fall Time: 45ns
Active Area: 100mm^2 (Diameter = 11.0mm)
NEP: 5.5x10^(-14) W/Hz^(1/2)
Dark Current: 1.0uA
Material: Si
Junction Capacitance: 1.75nF @0V
In Stock
Rise/Fall Time: 45ns
Active Area: 100mm^2 (Diameter = 11.0mm)
NEP: 5.5x10^(-14) W/Hz^(1/2)
Dark Current: 1.0uA
Material: Si
Junction Capacitance: 1.75nF @0V
399.00 399.0 USD

Price Valid only in North America


Rise/Fall Time: 14 ns
Active Area: 13mm^2 (3.6 x 3.6mm)
NEP: 1.6E-14 W/Hz^(1/2)
Dark Current: 0.35 nA
Material: UV-enhanced Si
Junction Capacitance: 40pF @5V
In Stock
Rise/Fall Time: 14 ns
Active Area: 13mm^2 (3.6 x 3.6mm)
NEP: 1.6E-14 W/Hz^(1/2)
Dark Current: 0.35 nA
Material: UV-enhanced Si
Junction Capacitance: 40pF @5V
364.00 364.0 USD

Price Valid only in North America


Rise/Fall Time: 10ns
Active Area: 13mm^2 (3.6x3.6mm)
NEP: 1.2x10^(-14) W/Hz^(1/2)
Dark Current: 0.3nA
Material: Si
Junction Capacitance: 65pF @5V
In Stock
Rise/Fall Time: 10ns
Active Area: 13mm^2 (3.6x3.6mm)
NEP: 1.2x10^(-14) W/Hz^(1/2)
Dark Current: 0.3nA
Material: Si
Junction Capacitance: 65pF @5V
364.00 364.0 USD

Price Valid only in North America


Active Area: 13mm^2 (3.6 x 3.6mm)
Rise Time: 10ns @20V
NEP: 1.2 x 10^(-14) W/Hz^(1/2) @ 900nm, 20V
Dark Current: 20nA @ 20V
Junction capacitance: 40pF @ 10V
In Stock
Active Area: 13mm^2 (3.6 x 3.6mm)
Rise Time: 10ns @20V
NEP: 1.2 x 10^(-14) W/Hz^(1/2) @ 900nm, 20V
Dark Current: 20nA @ 20V
Junction capacitance: 40pF @ 10V
323.00 323.0 USD

Price Valid only in North America


Active Area: 100mm^2 (10 x 10mm)
Rise Time: 150ns
NEP: 1.5 x 10^(-14) W/Hz^(1/2) @ 960nm
Dark Current: 200pA @ 5V
Junction capacitance: 380pF @ 5V
In Stock
Active Area: 100mm^2 (10 x 10mm)
Rise Time: 150ns
NEP: 1.5 x 10^(-14) W/Hz^(1/2) @ 960nm
Dark Current: 200pA @ 5V
Junction capacitance: 380pF @ 5V
323.00 323.0 USD

Price Valid only in North America
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