This multi-channel detector head has a front-illuminated CCD area sensor that offers high quantum efficiency. It incorporates a low-noise driver/amplifier circuit that provides reliable operation and a highly stable temperature controller that cools the sensor to a preset temperature level of (TS = -50°C) as soon as the power is turned on. If the cooler fails and the detector internal circuitry overheats, a built-in protection circuit will automatically turns off the detector. Despite its compact size, the housing has good heat dissipation and includes frontal threaded mounting holes for easy interface to the Sciencetech family of spectrographs.
CCD Area Image Sensor
The image sensors available for this detection system are specifically designed for low-light-level detection in scientific applications. By using the binning operation, the sensors can be used as a linear image sensor having a long aperture in the direction of the device length. This makes the image sensors ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. These image sensors also feature low noise and low dark signal (MPP mode operation). These enable low-light-level detection and long integration time, thus achieving a wide dynamic range. These sensors have a pixel size of 24 x 24 µm and are available in active area of 24.576 x 2.976 mm and 24.576 x 6.048 mm. A four-stage Peltier element is built into the same package for thermoelectric cooling. At room temperature operation, the device can be cooled down to -70°C with using forced air cooling. In addition, since both the CCD chip and Peltier element are hermetically sealed, no dry air is required, thus allowing easy handling.
Technical Specifications

• Cooling: Four-Stage TE-Cooled
• Number of Pixels: 1044 x 256
• Number of Active Pixels: 1024 x 252
• Pixel Size: 24 x 24 µm
• Wavelength Min.: 400 nm
• Wavelength Max.: 1100 nm
• Full Well Capacity: 300 ke^-
• Dark Current Typ.: 0.03 e^-/pixel/s
• Dark Current Max.: 1 e^-/pixel/s
• Readout Noise Typ.: 15 e^-rms
• Readout Noise Max.: 45 e^-rms