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Mounted Silicon Photodiode, (350-1100 nm), Anode Grounded

Sku: 525-4010

Quick Overview

Aperture: 9 mm diameter
Rise Time: 10ns @20V
Responsivity: 0.725 A/W
NEP: 2.07E-13 W/Hz^(1/2) @ 440nm, 20V
Dark Current: 200nA @ 5V
Junction capacitance: 375pF @ 5V

Availability: In stock


Product Attachments

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Additional Information

Name Mounted Silicon Photodiode, (350-1100 nm), Anode Grounded
SKU 525-4010
Spectral Region NIR, Visible
Detector Material Silicon (Si)
NEP 2.07 E-13
Active Area (diameter or square) 10+mm
Temperature Control Non-cooled
Spectral Range (nm) 350 - 1100
AC or DC Coupling DC Coupled
Single or Multichannel Single
Responsivity 0.725 A/W
Detectivity (cm-Hz^1/2/W) not aplicapable
Horizontal Pixel Range No
Detector Type Solid State


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