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Mounted Photodiode, Cathode Grounded (350-1100nm)

Sku: 582-4001

Quick Overview

Rise/Fall Time: 10ns
Active Area: 13mm^2 (3.6x3.6mm)
NEP: 1.2x10^(-14) W/Hz^(1/2)
Dark Current: 0.3nA
Material: Si
Junction Capacitance: 65pF @5V

Availability: In stock


Additional Information

Name Mounted Photodiode, Cathode Grounded (350-1100nm)
SKU 582-4001
Spectral Region NIR, UV, Visible
Detector Material Silicon (Si)
NEP 1.2 E-14
Active Area (diameter or square) 10+mm
Temperature Control Non-cooled
Spectral Range (nm) 350 - 1100
AC or DC Coupling DC Coupled
Single or Multichannel Single
Responsivity No
Detectivity (cm-Hz^1/2/W) No
Horizontal Pixel Range No
Detector Type Solid State


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