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Mounted UV-Enhanced Si Photodiode, Cathode Grounded (200-1100nm)

Sku: 582-4000

Quick Overview

Rise/Fall Time: 45ns
Active Area: 100mm^2 (Diameter = 11.0mm)
NEP: 5.5x10^(-14) W/Hz^(1/2)
Dark Current: 1.0uA
Material: Si
Junction Capacitance: 1.75nF @0V

Availability: In stock


Additional Information

Name Mounted UV-Enhanced Si Photodiode, Cathode Grounded (200-1100nm)
SKU 582-4000
Spectral Region NIR, UV, Visible
Detector Material Silicon (Si)
NEP 5.5 E-14
Active Area (diameter or square) 10+mm
Temperature Control Non-cooled
Spectral Range (nm) 200 - 1100
AC or DC Coupling DC Coupled
Single or Multichannel Single
Responsivity 0.44 A/W
Detectivity (cm-Hz^1/2/W) not applicable
Horizontal Pixel Range No
Detector Type Solid State


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