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UV-enhanced Si Mounted Photodiode, Cathode Grounded (200-1100nm)

Sku: 582-4002

Quick Overview

Rise/Fall Time: 450ns/45ns
Responsivity: 0.50 A/W
Active Area: Diameter = 9mm
NEP: 5.5E-14 W/Hz^(1/2)@5V
Dark Current: 1.0uA@5V
Material: UV-enhanced Si
Junction Capacitance: 1.75nF @0V

Availability: In stock


Product Attachments

View File525-4002    Size: (341.04 KB)

Additional Information

Name UV-enhanced Si Mounted Photodiode, Cathode Grounded (200-1100nm)
SKU 582-4002
Spectral Region NIR, UV, Visible
Detector Material UV Enhanced Silicon (UV-Si)
NEP 2.07 E-13
Active Area (diameter or square) 10+mm
Temperature Control Non-cooled
Spectral Range (nm) 200 - 1100
AC or DC Coupling DC Coupled
Single or Multichannel Single
Responsivity 0.5 A/W
Detectivity (cm-Hz^1/2/W) not applicable
Horizontal Pixel Range No
Detector Type Solid State


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