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Mounted Si Photodiode, Cathode Grounded (350-1100nm)

Sku: 582-4003

Quick Overview

Rise/Fall Time: 14 ns
Active Area: 13mm^2 (3.6 x 3.6mm)
NEP: 1.6E-14 W/Hz^(1/2)
Dark Current: 0.35 nA
Material: UV-enhanced Si
Junction Capacitance: 40pF @5V

Availability: In stock


Additional Information

Name Mounted Si Photodiode, Cathode Grounded (350-1100nm)
SKU 582-4003
Spectral Region NIR, UV, Visible
Detector Material Silicon (Si), UV Enhanced Silicon (UV-Si)
NEP 2.07 E-13
Active Area (diameter or square) 10+mm
Temperature Control Non-cooled
Spectral Range (nm) 400 - 1100
AC or DC Coupling DC Coupled
Single or Multichannel Single
Responsivity 0.65 A/W
Detectivity (cm-Hz^1/2/W) not applicable
Horizontal Pixel Range No
Detector Type Solid State


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